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| 2N4416/2N4416A/SST4416 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number 2N4416 2N4416A SST4416 VGS(off) (V) -v6 -2.5 to -6 -v6 V(BR)GSS Min (V) -30 -35 -30 gfs Min (mS) 4.5 4.5 4.5 IDSS Min (mA) 5 5 5 FEATURES D Excellent High-Frequency Gain: 2N4416/A, Gps 13 dB (typ) @ 400 MHz D Very Low Noise: 3 dB (typ) @ 400 MHz D Very Low Distortion D High AC/DC Switch Off-Isolation BENEFITS D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification APPLICATIONS D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches DESCRIPTION The 2N4416/2N4416A/SST4416 n-channel JFETs are designed to provide high-performance amplification at high frequencies. The TO-206AF (TO-72) hermetically-sealed package is available with full military processing (see Military Information.) The TO-236 (SOT-23) package provides a low-cost option and is available with tape-and-reel options (see Packaging Information). For similar products in the TO-226AA (TO-92) package, see the J304/305 data sheet. TO-206AF (TO-72) TO-236 (SOT-23) S 1 4 C D 1 3 S 2 D Top View 2N4416 2N4416A 3 G 2 G Top View SST4416 (H1)* *Marking Code for TO-236 For applications information see AN104. Document Number: 70242 S-50147--Rev. H, 24-Jan-05 www.vishay.com 1 2N4416/2N4416A/SST4416 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage : (2N/SST4416) . . . . . . . . . . . . . . . . . . . . . -30 V (2N4416A) . . . . . . . . . . . . . . . . . . . . . . . . . -35 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . -65 to 200 _C (SST Prefix) . . . . . . . . . . . . . . . . . -65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150 _C Power Dissipation : (2N Prefix)a . . . . . . . . . . . . . . . . . . . . . . 300 mW (SST Prefix)b . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.4 mW/_C above 25_C b. Derate 2.8 mW/_C above 25_C Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TA = 25_C UNLESS NOTED) Limits 2N4416 2N4416A SST4416 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Symbol Test Conditions Typa Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IG = -1 mA , VDS = 0 V VDS = 15 V, ID = 1 nA VDS = 15 V, VGS = 0 V VGS = -20 V, VDS = 0 V (2N) TA = 150_C VGS = -15 V, VDS = 0 V (SST) TA = 125_C VDG = 10 V, ID = 1 mA VDS = 10 V, VGS = -6 V VGS = 0 V, ID = 300 mA IG = 1 mA , VDS = 0 V -36 -3 10 -2 -4 -0.002 -0.6 -20 2 150 0.7 -30 -6 5 15 -100 -100 -35 -2.5 5 -6 15 -100 -100 -30 -6 5 15 V mA pA -1 nA Gate Reverse Current IGSS Gate Operating Current Drain Cutoff Currentc Drain-Source On-Resistancec Gate-Source Forward Voltagec IG ID(off) rDS(on) VGS(F) pA W V Dynamic Common-Source Forward Transconductanceb Common-Source Output Conductanceb Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Output Capacitance Equivalent Input Noise Voltagec gfs gos Ciss Crss Coss en VDS = 10 V, VGS = 0 V f = 1 kHz VDS = 15 V, VGS = 0 V f = 1 MHz VDS = 15 V, VGS = 0 V f = 1 kHz 6 15 2.2 0.7 1 6 4.5 7.5 50 4 0.8 2 4.5 7.5 50 4 0.8 2 nV Hz pF 4.5 7.5 50 mS mS www.vishay.com 2 Document Number: 70242 S-50147--Rev. H, 24-Jan-05 2N4416/2N4416A/SST4416 Vishay Siliconix HIGH-FREQUENCY SPECIFICATIONS FOR 2N4416/2N4416A (TA = 25_C UNLESS NOTED) Limits 100 MHz 400 MHz Parameter Common Source Input Conductanced Common Source Input Susceptanced Common Source Output Conductanced Common Source Output Susceptanced Common Source Forward Transconductanced Common-Source Power Gaind Noise Figured Symbol giss biss goss boss gfs Gps NF Test Conditions Min Max 100 2,500 Min Max 1,000 10,000 100 4,000 Unit VDS = 15 V, VGS = 0 V 75 1,000 4,000 m mS VDS = 15 V, ID = 5 mA RG = 1 kW 18 2 10 4 dB NH Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC. d. Not a production test. TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 20 IDSS - Saturation Drain Current (mA) 10 rDS(on) - Drain-Source On-Resistance ( ) gfs - Forward Transconductance (mS) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 500 gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 100 rDS @ ID = 300 mA, VGS = 0 V 80 gos - Output conductance (S) 16 IDSS 8 400 12 gfs 6 300 rDS gos 60 8 4 200 40 4 IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 0 -2 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) -10 2 100 20 0 0 0 0 0 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) -2 -10 Output Characteristics 10 VGS(off) = -2 V 8 ID - Drain Current (mA) ID - Drain Current (mA) VGS = 0 V 6 -0.2 V -0.4 V 4 -0.6 V -0.8 V 2 -1.0 V -1.2 V -1.4 V 2 4 6 8 VDS - Drain-Source Voltage (V) 12 15 Output Characteristics VGS(off) = -3 V VGS = 0 V 9 -0.3 V -0.6 V 6 -0.9 V -1.2 V 3 -1.5 V -1.8 V 0 0 10 0 0 2 4 6 8 VDS - Drain-Source Voltage (V) 10 Document Number: 70242 S-50147--Rev. H, 24-Jan-05 www.vishay.com 3 2N4416/2N4416A/SST4416 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) 5 Output Characteristics VGS(off) = -2 V 5 Output Characteristics VGS(off) = -3 V VGS = 0 V 4 ID - Drain Current (mA) VGS = 0 V -0.2 V ID - Drain Current (mA) -0.4 V -0.6 V 4 -0.3 V -0.6 V -0.9 V -1.2 V -1.5 V 3 3 2 -0.8 V -1.0 V 2 -1.8 V 1 -2.1 V 1 -1.2 V -1.4 V 0 0 0.2 0.4 0.6 0.8 1.0 VDS - Drain-Source Voltage (V) 0 0 0.2 0.4 0.6 0.8 1.0 VDS - Drain-Source Voltage (V) Transfer Characteristics 10 VGS(off) = -2 V 8 ID - Drain Current (mA) ID - Drain Current (mA) TA = -55_C 6 25_C VDS = 10 V 8 10 Transfer Characteristics VGS(off) = -3 V VDS = 10 V TA = -55_C 6 25_C 4 125_C 4 125_C 2 2 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) 0 0 -0.6 -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage 10 VGS(off) = -2 V gfs - Forward Transconductance (mS) 8 TA = -55_C 6 25_C VDS = 10 V f = 1 kHz gfs - Forward Transconductance (mS) 8 10 Transconductance vs. Gate-Source Voltgage VGS(off) = -3 V VDS = 10 V f = 1 kHz TA = -55_C 6 25_C 4 125_C 4 125_C 2 2 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) 0 0 -0.6 -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V) www.vishay.com 4 Document Number: 70242 S-50147--Rev. H, 24-Jan-05 2N4416/2N4416A/SST4416 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance vs. Drain Current 300 rDS(on) - Drain-Source On-Resistance ( ) TA = 25_C 240 AV - Voltage Gain VGS(off) = -2 V 180 -3 V 120 80 100 Circuit Voltage Gain vs. Drain Current g fs R L AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V RL + 10 V ID 60 40 VGS(off) = -2 V 60 20 -3 V 0 0.1 ID - Drain Current (mA) 1 10 0 0.1 ID - Drain Current (mA) 1 10 Common-Source Input Capacitance vs. Gate-Source Voltage 5 Crss - Reverse Feedback Capacitance (pF) f = 1 MHz 4 Ciss - Input Capacitance (pF) 3 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage f = 1 MHz 2.4 3 VDS = 0 V 2 10 V 1.8 VDS = 0 V 1.2 1 0.6 10 V 0 0 -4 -8 -12 -16 VGS - Gate-Source Voltage (V) -20 0 0 -4 -8 -12 -16 VGS - Gate-Source Voltage (V) -20 100 Input Admittance TA = 25_C VDS = 15 V VGS = 0 V Common Source bis 100 Forward Admittance TA = 25_C VDS = 15 V VGS = 0 V Common Source 10 (mS) gis (mS) 10 gfs -bfs 1 1 0.1 100 200 500 1000 0.1 100 200 500 1000 f - Frequency (MHz) f - Frequency (MHz) Document Number: 70242 S-50147--Rev. H, 24-Jan-05 www.vishay.com 5 2N4416/2N4416A/SST4416 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Reverse Admittance 10 TA = 25_C VDS = 15 V VGS = 0 V Common Source 1 (mS) (mS) -brs 10 Output Admittance bos 1 gos -grs 0.1 0.1 TA = 25_C VDS = 15 V VGS = 0 V Common Source 0.01 100 0.01 200 500 f - Frequency (MHz) 1000 100 200 500 f - Frequency (MHz) 1000 100 nA 10 nA 1 nA 100 pA Gate Leakage Current IG @ ID = 5 mA 1 mA 0.1 mA gfs - Forward Transconductance (mS) 10 Common-Source Forward Transconductance vs. Drain Current VGS(off) = -3 V VDS = 10 V f = 1 kHz 8 TA = -55_C IG - Gate Leakage TA = 125_C IGSS @ 125_C 1 mA TA = 25_C 0.1 mA IGSS @ 25_C 6 25_C 4 5 mA 10 pA 1 pA 0.1 pA 0 4 125_C 2 0 8 12 16 VDG - Drain-Gate Voltage (V) 20 0.1 1 ID - Drain Current (mA) 10 20 Equivalent Input Noise Voltage vs. Frequency VDS = 10 V 20 Output Conductance vs. Drain Current VGS(off) = -3 V VDS = 10 V f = 1 kHz 16 Hz gos - Output Conductance (S) 16 TA = -55_C 12 25_C 125_C 4 en - Noise Voltage nV / 12 8 ID = 5 mA VGS = 0 V 0 10 100 1k f - Frequency (Hz) 10 k 100 k 8 4 0 0.1 1 ID - Drain Current (mA) 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70242. www.vishay.com Document Number: 70242 S-50147--Rev. H, 24-Jan-05 6 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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